As per a blog post released by Samsung, the upcoming flagship smartphones and other portable devices will be capable of achieving higher storage capacity and performance utilising the company's new 64-layer 512 GB V-NAND chips.
The new 512GB UFS device consists of eight 64-layer 512-gigabit V-NAND chips stacked together with a controller chip.
Further, Han added that the company is taking a big leap by promising an early and consistent supply of advanced embedded storage to speed up the future launch of the premium smartphones across the world.
Samsung also states that the chip comes with sequential read and write speeds of up to 860 Mbps and 255 Mbps respectively.
While consumers won't care too much about the technology that goes into these new beasts, Samsung will catch the eyes of those looking for strong read and write performances from their mobile storage.
If you're feeling ultra swaggy for bagging yourself a shiny new iPhone X or Samsung Galaxy S8 with a massive 256GB of storage, and you still feel like that's not enough, you're in luck.
In a recent time, the technology has become advanced and following this South Korean multinational technology company, Samsung is planning to expand its business and enter to a new level. That's almost 400 times faster than the 100 IOPS random write speed achieved by a microSD card. Obviously, these chips are being used in more than just mobile phones, since SSDs and high-performance removable memory cards also take advantage of their performance and reliability.
On a related note, Samsung intends to steadily increase an aggressive production volume for its 64-layer 512Gb V-NAND chips, in addition to expanding its 256Gb V-NAND production. Let us know in the comments.